Product Summary

The FZ1600R12KF4-S1 is an IGBT module.

Parametrics

FZ1600R12KF4-S1 absolute maximum ratings: FZ1600R12KF4(1)collector-emitter voltage VCES: 1200 V; (2)DC-collector current IC: 1600 A; (3)repetitive peak collctor current tp=1 ms ICRM: 3200 A; (4)total power dissipation tC=25℃, Transistor /transistor Ptot: 10 kW; (5)gate-emitter peak voltage VGE: ± 20 V; (6)DC forward current IF: 1600 A; (7)repetitive peak forw current tp=1ms IFRM: 3200 A; (8)insulation test voltage RMS, f=50 Hz, t= 1 min. VISOL: 2.5 kV.

Features

FZ1600R12KF4-S1 features: (1)thermal resistance, junction to case Transistor / transistor, DC RthJC: 0,0125 ℃/W; Diode /diode, DC 0,021 ℃/W; (2)thermal resistance, case to heatsink pro Module / per Module RthCK: typ. 0,008 ℃/W; (3)max. junction temperature Tvj max: 150 ℃; (4)operating temperature Tc op: -40 to +150 ℃; (5)storage temperature Tstg: -40 to +125 ℃.

Diagrams

FZ1600R12KF4-S1 diagram

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