(China (Mainland))
Product Summary
The SHF-0289 is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compression for the SHF-0289 is +30dBm when biased for Class AB operation at 8V and 250mA. The+46 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. They are well suitedfor use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS,CDPD, wireless data, and pagers. Applications include Analog and Digital Wireless System and Cellular PCS, CDPD, Wireless Data, Pagers.
Parametrics
SHF-0289 absolute maximum ratings: (1)drain to source voltage: 12V; (2)gate to source voltage: -5 to 0V; (3)operating temperature: -45 to 85℃; (4)channel temperature: 175℃; (5)storage temperature: -65 to 175℃.
Features
SHF-0289 features: (1)Patented GaAs Heterostructure FET Technology; (2)30dBm Output Power at 1dB Compression; (3)+46dBm Output IP3; (4)High Drain Efficiency: Up to 40% at Class AB; (5)13 dB Gain at 900MHz (Application circuit); (6)13 dB Gain at 1900MHz (Application circuit).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 SHF-0289 |
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IC HFET ALGAAS/GAAS 1W SOT-89 |
Data Sheet |
Negotiable |
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SHF-0289(Z) |
Other |
|
Data Sheet |
Negotiable |
|
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SHF-0289Z |
|
IC HFET ALGAAS/GAAS 1W SOT-89 |
Data Sheet |
Negotiable |
|
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