(China (Mainland))
Product Summary
The 6AM11 is a Silicon N-Channel/P-Channel Power MOS FET Array.
Parametrics
Absolute maximum ratings: (1)Drain to source voltage:Nch:60V, Pch:–60V; (2)Gate to source voltage:Nch:±20V, Pch:±20V; (3)Drain current:Nch:5A, Pch:–5A; (4)Drain peak current:Nch:20A, Pch:–20A; (5)Body to drain diode reverse drain current:Nch:5A, Pch:–5A; (6)Channel temperature:150℃; (7)Storage temperature:–55℃ to +150℃.
Features
Features: (1)Low on-resistance:N-channel:RDS(on)≤ 0.17,VGS=10V, ID=2.5A,P-channel:RDS(on)≤ 0.2,VGS=–10V, ID=–2.5A; (2)Capable of 4 V gate drive; (3)Low drive current; (4)High speed switching; (5)High density mounting; (6)Suitable for H-bridged motor driver.
Diagrams
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 6AM11 |
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6AM11 |
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6AM12 |
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6AM13 |
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6AM14 |
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6AM15 |
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