Product Summary
The FZT649TA is a NPN silicon planar high performance transistor.
Parametrics
Absolute maximum ratings: (1)Collector-Base Voltage:35 V; (2)Collector-Emitter Voltage:25 V; (3)Emitter-Base Voltage:5V; (4)Peak Pulse Current:8A; (5)Continuous Collector Current:3A; (6)Power Dissipation at Tamb =25℃:2W; (7)Operating and Storage Temperature Range:-55℃ to +150℃.
Features
Features: (1)25 Volt VCEO; (2)3 Amp continuous current; (3)Low saturation voltage; (4)Excellent hFE specified up to 6A.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FZT649TA |
Diodes Inc. |
Transistors Bipolar (BJT) NPN Medium Power |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||
FZT600 |
Other |
Data Sheet |
Negotiable |
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FZT600B |
Other |
Data Sheet |
Negotiable |
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FZT600BTA |
Diodes Inc. |
Transistors Darlington NPN Darlington |
Data Sheet |
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FZT600BTC |
Diodes Inc. / Zetex |
Transistors Darlington NPN Darlington |
Data Sheet |
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FZT600TA |
Diodes Inc. |
Transistors Darlington NPN Darlington |
Data Sheet |
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FZT600TC |
Diodes Inc. / Zetex |
Transistors Darlington NPN Darlington |
Data Sheet |
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